p age:p2-p1 plastic-encapsulate transistors features complimentary to ss8050 marking : y2 maximum ratings (ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v collector current -continuous i c -1500 ma collector power dissipation p c 300 mw junction temperature t j 150 storage temperature t stg -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max umiot collector-base breakdown voltage v cbo i c =-100 a, i e =0 -40 v collector-emitter breakdown voltage v ceo i c =-0.1ma, i b =0 -25 v emitter-base breakdown voltage v ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-40v, i e =0 -0.1 a collector cut-off current i ceo v ce =-20v, i b =0 -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 a dc current gain h fe(1) v ce =-1v, i c =-100ma 120 400 h fe(2) v ce =-1v, i c =-800ma 40 collector-emitter saturation voltage v ce(sat) i c =-800ma, i b =-80ma -0.5 v base-emitter saturation voltage v be(sat) i c =-800ma, i b =-80ma -1.2 v base-emitter on voltage v be(on) i c =-1v,v ce =-10ma -1 v base-emitter positive favor voltage v bef i b =-1a -1.55 v transition frequency f t v ce = -10v, i c = -50ma f=30mhz 100 mhz output capacitance c ob (v cb =-10v,i e =0,f=1mhz) 20 pf classification of h fe rank l h j range 120-200 200-350 300-400 (pnp) 1. base 2. emitter sot-23 3. collecto SS8550 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
page:p2-p2 plastic-encapsulate transistors typical characteristics -0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -0.2 -0.3 -0.4 -0.5 i b =-4. 0ma i b =-3. 5ma i b =-3. 0ma i b =-2. 5ma i b =-2. 0ma i b =-1. 5ma i b =-1. 0ma i b =-0. 5ma i c [a], co ll ector current v ce [v] , collector-emitter voltage -0.1 -1 -10 -1 00 -1000 1 10 100 1000 v ce = -1v h fe , dc current gain i c [m a ], co llector current -0. 1 -1 -1 0 -100 -1000 -10 -100 -1000 -10000 v ce(sa t) v be(sa t) i c =10i b v be (sat) , v ce (s a t)[ m v], saturation voltage i c [ma ] , collector current -0.0 -0 .2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 v ce = -1v i c [m a], col lector current v be [v], base-em it ter voltage -1 -1 0 -1 00 -1000 1 10 100 f=1mhz i e =0 c ob [p f ], capacitance v cb [v], c o llector-base voltage -1 -1 0 -1 00 -1000 10 100 1000 v ce =-10v f t [ m hz ], current gain-bandwidth product i c [m a ], collector current SS8550 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
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